features 100% r g tested si4826dy vishay siliconix document number: 71137 s-31726?rev. b, 18-aug-03 www.vishay.com 1 asymmetrical dual n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) channel 1 0.022 @ v gs = 10 v 6.3 channel-1 30 0.030 @ v gs = 4.5 v 5.4 channel 2 30 0.0155 @ v gs = 10 v 9.5 channel-2 0.0205 @ v gs = 4.5 v 8.2 s 1 d 1 g 1 d 2 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 g 2 s 2 g 1 s 1 d 1 d 2 d 2 d 2 n-channel 2 mosfet n-channel 1 mosfet ordering information: si4826dy SI4826DY-T1 (with t ape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) channel 1 channel 2 parameter symbol 10 secs steady state 10 secs steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current ( t j = t a = 25 c i d 6.3 5.3 9.5 7.0 continuous drain current (t j = 150 c) no tag t a = 70 c i d 5.4 4.2 7.6 5.6 a pulsed drain current i dm 30 40 a continuous source current (diode conduction) no tag i s 1.3 0.9 2.2 1.15 maximum power dissipation no tag t a = 25 c p d 1.4 1.0 2.4 1.25 w maximum power dissipation no tag t a = 70 c p d 0.9 0.64 1.5 0.80 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings channel 1 channel 2 parameter s y mbol typ max typ max unit mi j ti tabit no tag t 10 sec r 72 90 43 53 maximum junction-to-ambient no tag steady-state r thja 100 125 82 100 c/w maximum junction-to-foot (drain) steady-state r thjc 51 63 25 30 c/w notes a. surface mounted on 1? x 1? fr4 board.
si4826dy vishay siliconix www.vishay.com 2 document number: 71137 s-31726?rev. b, 18-aug-03 mosfet specifications (t j = 25 c unless otherwise noted). parameter symbol test condition min typ max unit static gate threshold voltage v gs( h) v ds = v gs i d = 250 a ch-1 0.8 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ch 1 ch-2 1.0 v gate body leakage i gss v ds = 0 v v gs = 20 v ch-1 100 na gate-body leakage i gss v ds = 0 v, v gs = 20 v ch 1 ch-2 100 na v ds = 24 v v gs = 0 v ch-1 1 zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v ch 1 ch-2 1 a zero gate voltage drain current i dss v ds = 24 v v gs = 0 v t j = 85 c ch-1 15 a v ds = 24 v, v gs = 0 v, t j = 85 c ch 1 ch-2 15 on state drain current a i d( ) v ds = 5 v v gs = 10 v ch-1 20 a on-state drain current a i d(on) v ds = 5 v, v gs = 10 v ch 1 ch-2 30 a v gs = 10 v, i d = 6.3 a ch-1 0.018 0.022 drain source on state resistance a r ds( ) v gs = 10 v, i d = 9.5 a ch 1 ch-2 0.0125 0.0155 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 5.4 a ch-1 0.024 0.030 v gs = 4.5 v, i d = 8.2 a ch 1 ch-2 0.0165 0.0205 forward transconductance a g f v ds = 15 v, i d = 6.3 a ch-1 17 s forward transconductance a g fs v ds = 15 v, i d = 9.5 a ch 1 ch-2 28 s diode forward voltage a v sd i s = 1.3 a, v gs = 0 v ch-1 0.7 1.1 v diode forward voltage a v sd i s = 2.2 a, v gs = 0 v ch 1 ch-2 0.75 1.1 v dynamic b total gate charge q ch-1 8.0 12 total gate charge q g channel-1 ch 1 ch-2 15 23 gate source charge q channel - 1 v ds = 15 v, v gs = 5 v, i d = 6.3 a ch-1 1.75 nc gate-source charge q gs channel-2 ch 1 ch-2 5.3 nc gate drain charge q d channel 2 v ds = 15 v, v gs = 5 v, i d = - 9.5 a ch-1 3.2 gate-drain charge q gd ch 1 ch-2 4.6 gate resistance r ch-1 1.5 5.1 gate resistance r g ch 1 ch-2 0.5 2.6 turn on delay time t d( ) ch-1 10 20 turn-on delay time t d(on) ch l 1 ch 1 ch-2 15 30 rise time t channel-1 v dd = 15 v , r l = 15 ch-1 5 10 rise time t r v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 ch 1 ch-2 5 10 turn off delay time t d( ff) channel-2 ch-1 26 50 ns turn-off delay time t d(off) channel 2 v dd = 15 v, r l = 15 i d 1 a v gen = 10 v r g = 6 ch 1 ch-2 44 80 ns fall time t f i d 1 a , v gen = 10 v , r g = 6 ch-1 8 16 fall time t f ch 1 ch-2 12 24 source drain reverse recovery time t i f = 1.3 a, di/dt = 100 a/ s ch-1 30 60 source-drain reverse recovery time t rr i f = 2.2 a, di/dt = 100 a/ s ch 1 ch-2 32 70 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
si4826dy vishay siliconix document number: 71137 s-31726?rev. b, 18-aug-03 www.vishay.com 3 typical characteristics (25 c unless noted) channel 1 0.00 0.01 0.02 0.03 0.04 0.05 0 6 12 18 24 30 on-resistance vs. drain current - on-resistance ( r ds(on) ) i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 200 400 600 800 1000 0 6 12 18 24 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 0 6 12 18 24 30 0246810 0 2 4 6 8 10 0 3 6 9 12 15 v gs = 10 thru 4 v t c = 125 c -55 c v ds - drain-to-source voltage (v) c rss c oss c iss v ds = 15 v i d = 6.3 a v gs = 10 v i d = 6.3 a 3 v 25 c output characteristics transfer characteristics gate charge v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 1 v 2 v
si4826dy vishay siliconix www.vishay.com 4 document number: 71137 s-31726?rev. b, 18-aug-03 typical characteristics (25 c unless noted) channel 1 0.00 0.02 0.04 0.06 0.08 0.10 0246810 on-resistance vs. gate-to-s ource v oltage v gs - gate-to-source voltage (v) i d = 6.3 a - on-resistance ( r ds(on) ) 0.001 0 1 100 40 60 10 0.1 single pulse power, junction-to-ambient time (sec) 20 80 power (w) - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t j = 150 c i d = 250 a 40 10 1 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 10 600 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold v oltage variance (v) v gs(th) t j - temperature ( c) source-drain diode forward voltage normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance v sd - source-to-drain voltage (v) - source current (a) i s 1. duty cycle, d = 2. per unit base = r thja = 100 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 100 t j = 25 c 0.01
si4826dy vishay siliconix document number: 71137 s-31726?rev. b, 18-aug-03 www.vishay.com 5 typical characteristics (25 c unless noted) channel 1 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance typical characteristics (25 c unless noted) channel 2 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.000 0.006 0.012 0.018 0.024 0.030 0 8 16 24 32 40 0 8 16 24 32 40 0246810 0 500 1000 1500 2000 2500 0 6 12 18 24 30 v gs = 10 thru 4 v 25 c t c = 125 c c rss c oss c iss v gs = 4.5 v v gs = 10 v -55 c 3 v output characteristics transfer characteristics on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d v ds - drain-to-source voltage (v) c - capacitance (pf) - on-resistance ( r ds(on) ) i d - drain current (a) capacitance 2 v
si4826dy vishay siliconix www.vishay.com 6 document number: 71137 s-31726?rev. b, 18-aug-03 typical characteristics (25 c unless noted) channel 2 0 2 4 6 8 10 0 6 12 18 24 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 v ds = 15 v i d = 9.5 a v gs = 10 v i d = 9.5 a gate charge - gate-to-source voltage (v) q g - total gate charge (nc) v gs on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0.00 0.01 0.02 0.03 0.04 0.05 0246810 on-resistance vs. gate-to-s ource v oltage v gs - gate-to-source voltage (v) i d = 9.5 a - on-resistance ( r ds(on) ) 0.001 0 1 100 40 60 10 0.1 single pulse power, junction-to-ambient time (sec) 20 80 power (w) - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t j = 150 c i d = 250 a 40 10 1 threshold v oltage variance (v) v gs(th) t j - temperature ( c) source-drain diode forward voltage v sd - source-to-drain voltage (v) - source current (a) i s t j = 25 c 0.01
si4826dy vishay siliconix document number: 71137 s-31726?rev. b, 18-aug-03 www.vishay.com 7 typical characteristics (25 c unless noted) channel 2 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 -3 10 -2 1 10 600 10 -1 10 -4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 82 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
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